PART |
Description |
Maker |
MX29VL320MBMI-10G MX29VL320MBMI-10R MX29VL033MBTI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MACRONIX INTERNATIONAL CO LTD Macronix International Co., Ltd.
|
MX29LA128MTTI-90R MX29LA128MB MX29LA128MBTC-10 MX2 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs 2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC 2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8 2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23 2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC 2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
|
UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp. NEC Corp.
|
K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory From old datasheet system Optocoupler with Phototransistor Output XTAL MTL T/H HC49/U
|
Samsung Electronic TFUNK Vishay Telefunken Vishay Intertechnology,Inc.
|
UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 |
128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM 128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM 128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
|
NEC
|
K4S280832B |
128M-bit SDRAM
|
Samsung Electronics
|
M37210M4-227SP M37210M4-218SP M37210M3-560SP M3721 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER SINGLE CHIP 8-BIT CMOS MICROCOMPUTER FOR VOLTAGE SYNTHESIZER Single Chip 8-Bit CMOS MICROCOMPUTER for Voltage SYNTHESISER WITH OSD Controller Single-chip 8-bit CMOS microcfomputer for voltage synthesizer with on-screen display controller.
|
Mitsubishi Electric Corporation
|